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Influence of crystal growth conditions on electrical properties and phase transitions in LiIO3

โœ Scribed by M. Remoissenet; J. Garandet; H. Arend

Book ID
113184831
Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
277 KB
Volume
10
Category
Article
ISSN
0025-5408

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## Abstract A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of postโ€growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high temperatures. Ge~Te~ defect is an acc