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Influence of argon partial pressure on the electrical and optical properties of sputtered hydrogenated amorphous silicon

✍ Scribed by R. Swanepoel; P.L. Swart; Herzl Aharoni

Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
784 KB
Volume
128
Category
Article
ISSN
0040-6090

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## Abstract In the modern MOS‐based device the poly‐silicon morphological and electrical properties play a very important role for the final die performance. In particular for flash memory devices, due to the continuous shrinkage, it is very important to control the relationship between process par