Influence of argon gas pressure on the ZnO:Al films deposited on flexible TPT substrates at room temperature by magnetron sputtering
β Scribed by Wang, Xiaojing (author);Lei, Qingsong (author);Yuan, Junming (author);Zhou, Wenli (author);Yu, Jun (author)
- Publisher
- Wuhan University of Technology
- Year
- 2011
- Tongue
- English
- Weight
- 368 KB
- Volume
- 26
- Category
- Article
- ISSN
- 1000-2413
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## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al
## Abstract Transparent and conductive Alβdoped ZnO (AZO) films with thickness between 0.2 and 1.1 ΞΌm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline with average crystallite size increasing when the film thic