The Si H stretch modes in proton-implanted crystalline silicon have been studied by FTIR spectroscopy. From the annealing behaviour and dose dependence of the stretch-mode intensities, it is found that one complex gives rise to modes at 2121 and 2144 cm-~, a second to modes at 2166 and 2191 cm ~, an
✦ LIBER ✦
Induction-model analysis of SiH stretching mode in porous silicon
✍ Scribed by A. Borghesi; G. Guizzetti; A. Sassella; O. Bisi; L. Pavesi
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 326 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0038-1098
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