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Indium surface segregation during chemical beam epitaxy of Ga1 − xInxAsGaAs and Ga1 − xInxPGaAs heterostructures

✍ Scribed by M. Mesrine; J. Massies; C. Deparis; N. Grandjean; E. Vanelle; M. Leroux


Book ID
108342363
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
406 KB
Volume
175-176
Category
Article
ISSN
0022-0248

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