Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering

✍ Scribed by Zhang, Keran; Zhu, Furong; Huan, C. H. A.; Wee, A. T. S.; Osipowicz, T.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 133 KB
• Volume: 28
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199908)28:1<271::aid-sia592>3.0.co;2-1

✦ Synopsis

Indium

-doped zinc oxide (ZnO : In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is ~0.4. Uniform ZnO : In films with a resistivity of ~7×10 -4 Z.cm and a high transparency (>85%) were achieved, with further optimization possible. Copyright