Indirect adatom interactions via III–V semiconductor substrates

✍ Scribed by D. W. Schranz; S. G. Davison

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 482 KB
• Volume: 67
• Category: Article
• ISSN: 0020-7608
• DOI: 10.1002/(sici)1097-461x(1998)67:6<377::aid-qua4>3.0.co;2-s

✦ Synopsis

Substrate-mediated interactions between adatoms on III᎐V semiconductors are investigated by using the self-consistent Anderson᎐Newns model in the Hartree᎐Fock approximation. The Green function formalism of the Dyson equation approach is employed to derive Chebyshev polynomial expressions for the chemisorption energy, interaction energy, and charge transfer, in terms of the adatom separation d. An alternating s-and p-orbital model of GaSb and InAs enabled interacting hydrogen Ž .

Ž . adatoms on their 100 and 111 faces to be studied. As in the metal᎐substrate case, the chemisorption energy decreased with increasing band widths and adbond energy and, additionally, with increasing band gap. The interaction energy was found to have a d y2 Ž .

y3

Ž . damping factor for the 100 faces and a d factor for the 111 faces, its magnitude being larger for smaller gaps. Self-consistency is shown to play a significant role in interaction energy calculations for small values of d. In the case of charge transfer, its variation with d is purely a self-consistent result.