✦ LIBER ✦

Ad-atom interactions with III-V semiconductor surfaces

✍ Scribed by I. Lindau; W.E. Spicer; P. Pianetta; P.W. Chye; C.M. Garner

Publisher: Elsevier Science
Year: 1979
Tongue: English
Weight: 221 KB
Volume: 15
Category: Article
ISSN: 0368-2048
DOI: 10.1016/0368-2048(79)87032-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Long range interaction between hydrogen

Long range interaction between hydrogen and rare gas atoms with surfaces of III–V semiconductors

✍ M. Karimi; G. Vidali 📂 Article 📅 1987 🏛 Elsevier Science ⚖ 292 KB

Atomic structure of reconstructed group

Atomic structure of reconstructed group IV and III–V semiconductor surfaces

✍ D.J. Chadi 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 536 KB

Electronic structure of Si(111) surfaces

Electronic structure of Si(111) surfaces with group III Ad-atoms

✍ G.V. Hansson; J.M. Nicholls; P. Mårtensson; R.I.G. Uhrberg 📂 Article 📅 1986 🏛 Elsevier Science ⚖ 41 KB

Study of the interaction of plasmas with

Study of the interaction of plasmas with III–V semiconductor surfaces, application to passivation

✍ P. Friedel; S. Gourrier; J.B. Theeten; D. Arnoult; M. Taillepied; M. Erman 📂 Article 📅 1986 🏛 Elsevier Science ⚖ 48 KB

Indirect adatom interactions via III–V s

Indirect adatom interactions via III–V semiconductor substrates

✍ D. W. Schranz; S. G. Davison 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 482 KB

Substrate-mediated interactions between adatoms on III᎐V semiconductors are investigated by using the self-consistent Anderson᎐Newns model in the Hartree᎐Fock approximation. The Green function formalism of the Dyson equation approach is employed to derive Chebyshev polynomial expressions for the che

Electronic Properties of Hydrogen Expose

Electronic Properties of Hydrogen Exposed III–V Semiconductor Surfaces

✍ Nannarone, S. 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 368 KB 👁 2 views