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Increasing the degradation resistance of semi-insulating gallium arsenide crystals by plasma processing

✍ Scribed by N. I. Klyui, A. I. Liptuga, V. B. Lozinskii, A. P. Oksanich, V. A. Terban, F. V. Fomovskii

No coin nor oath required. For personal study only.

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