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Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals

✍ Scribed by K. D. Glinchuk; N. M. Litovchenko; A. V. Prokhorovich; O. N. Stril’chuk


Book ID
110120368
Publisher
Springer
Year
2000
Tongue
English
Weight
44 KB
Volume
34
Category
Article
ISSN
1063-7826

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✍ Dr.; Prof. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 227 KB 👁 2 views

It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom