Effects of Heat-Treatment Duration and Dislocation Density on the Transport Properties of Semi-insulating Gallium Arsenide Crystals
β Scribed by M. B. Litvinova; S. V. Shutov; I. V. Boriskin
- Book ID
- 111532294
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2001
- Tongue
- English
- Weight
- 29 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0020-1685
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It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom
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