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Incorporation of boron during the growth of GaAs single crystals

✍ Scribed by Hopkins, C. G.; Deline, V. R.; Blattner, R. J.; Evans, C. A.; Magee, T. J.


Book ID
118045322
Publisher
American Institute of Physics
Year
1980
Tongue
English
Weight
462 KB
Volume
36
Category
Article
ISSN
0003-6951

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## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi