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Formation of dislocations during liquid encapsulated Czochralski growth of GaAs single crystals

✍ Scribed by Duseaux, Marc; Jacob, Guy

Book ID
118045323
Publisher
American Institute of Physics
Year
1982
Tongue
English
Weight
568 KB
Volume
40
Category
Article
ISSN
0003-6951

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Modeling analysis of liquid encapsulated
Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals
✍ E. V. Yakovlev; V. V. Kalaev; E. N. Bystrova; O. V. Smirnova; Yu. N. Makarov; Ch πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 1012 KB

## Abstract The results of three‐dimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The