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Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As

✍ Scribed by H. Künzel; R. Bochnia; R. Gibis; P. Harde; W. Passenberg


Book ID
104722414
Publisher
Springer
Year
1990
Tongue
English
Weight
778 KB
Volume
51
Category
Article
ISSN
1432-0630

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Cd diffusion in In0.53Ga0.47As
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Diffusion experiments of Cd in VPE-InGaAs, lattice matched to InP, are reported. The closed ampoule technique used makes i t possible t o discuss the thermodynamics of the diffusion system consisting of the semiconductor samples, Cd,As, as compound source and additional In or GaAs powder t o prevent