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Incoherent light annealing of phosphorus-doped polycrystalline silicon

✍ Scribed by Borisenko, V. E. ;Gribkovskii, V. V. ;Labunov, V. A. ;Samuilov, V. A. ;Yashin, K. D.


Book ID
105376617
Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
272 KB
Volume
75
Category
Article
ISSN
0031-8965

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Diffusion of phosphorus into p-type silicon from spun-on phosphorosilica films has been induced by means of incoherent light from a xenon arclamp. A suitable process for solar cell preparation appears to be heating for 20 s to 1000 Β°C, followed by gradual cooling. Sheet resistivities of around 35 ~2