Incoherent-light induced diffusion of phosphorus as a doping procedure for low-cost silicon solar cells
✍ Scribed by A. Nylandsted Larsen; L. Drud Nielsen
- Publisher
- Elsevier Science
- Year
- 1985
- Weight
- 347 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0379-6787
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✦ Synopsis
Diffusion of phosphorus into p-type silicon from spun-on phosphorosilica films has been induced by means of incoherent light from a xenon arclamp. A suitable process for solar cell preparation appears to be heating for 20 s to 1000 °C, followed by gradual cooling. Sheet resistivities of around 35 ~2/[] may be achieved under these conditions, with no appreciable degradation of the bulk-material properties. Doping profiles measured by the Hall effect exhibit a maximum concentration of 2 -3 X 1020 cm -3 at the silicon surface and a junction depth of about 1500 A. A number of test-cell batches have been prepared from single-as well as polycrystalline material, and very favourable and reproducible spectral-response characteristics have been found. In spite of the non-optimized cell design and a rather primitive antireflective coating, AM 1 efficiencies of up to 12.7% (single-crystal cell) and 8.2% (polycrystalline cell) have been recorded.