We report the results of spatially resolved micro-photoluminescence on self-organized InAs/GaAs quantum dots. Our results suggest that carrier thermal redistribution is linked to the effects of carrier migration in these quantum dots. The higher migration length was observed at 150 K, making the hig
✦ LIBER ✦
InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 μm
✍ Scribed by Y.D. Jang; J.S. Yim; U.H. Lee; D. Lee; J.W. Jang; K.H. Park; W.G. Jeong; J.H. Lee; D.K. Oh
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 118 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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