𝔖 Bobbio Scriptorium
✦   LIBER   ✦

InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 μm

✍ Scribed by Y.D. Jang; J.S. Yim; U.H. Lee; D. Lee; J.W. Jang; K.H. Park; W.G. Jeong; J.H. Lee; D.K. Oh


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
118 KB
Volume
17
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Optical and transport properties of InAs
✍ A.F.G. Monte; J.F.R. Cunha; M.A.P. Soler; S.W. Silva; A.A. Quivy; P.C. Morais 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 209 KB

We report the results of spatially resolved micro-photoluminescence on self-organized InAs/GaAs quantum dots. Our results suggest that carrier thermal redistribution is linked to the effects of carrier migration in these quantum dots. The higher migration length was observed at 150 K, making the hig

Effects of accumulated strain on the sur
✍ Tao Yang; Jun Tatebayashi; Masao Nishioka; Yasuhiko Arakawa 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 402 KB

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mm InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain i