In1−xGaxP Bulk crystal growth and In1−xGaxPepitaxial growth on In1−xGaxP substrate by the temperature difference method under controlled vapor pressure

✍ Scribed by J. Nishizawa; S. Yoshida

• Book ID: 107789759
• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 922 KB
• Volume: 76
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(86)90002-3