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Free exciton recombination in GaP and GaPAlxGa1 − xP layers grown by temperature difference method under controlled vapor pressure

✍ Scribed by K. Suto; S. Adachi; T. Yoneyama; J. Nishizawa


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
502 KB
Volume
160
Category
Article
ISSN
0022-0248

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