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In0.52Al0.48As/InxGa1-x As (0.53&les;x&les;0.70) lattice-matched and strained heterostructure insulated-gate FETs

✍ Scribed by Chan, Y.-J.; Pavlidis, D.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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Low- and high-field transport properties

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Single and dual p-doped channel In0.52Al

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Characteristics of a In0.52(AlxGa1-x )0.

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Growth of high quality Al0.48In0.52As/Ga

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