In-vacancies in Si-doped InN

✍ Scribed by Rauch, C. ;Reurings, F. ;Tuomisto, F. ;Veal, T. D. ;McConville, C. F. ;Lu, H. ;Schaff, W. J. ;Gallinat, C. S. ;Koblmüller, G. ;Speck, J. S. ;Egger, W. ;Löwe, B. ;Ravelli, L. ;Sojak, S.

• Book ID: 105365751
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 250 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983120

✦ Synopsis

Abstract

The introduction of vacancy type point defects by Si doping in InN grown by plasma‐assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In‐vacancy (V~In~) acceptors were identified in the material. For increasing Si doping an enhanced formation of V~In~ defects was observed, up to a concentration of $c_{\rm V} = 7 \times 10^{17} ,{\rm cm}^{ - 3} $ in the highest doped sample ($n_{\rm e} = 6.6 \times 10^{20} ,{\rm cm}^{ - 3} $). A strong inhomogeneity of the defect profile with a significant increase of the V~In~ concentration toward the layer/substrate interface could be detected. Additionally, larger vacancy clusters containing several V~In~ are formed in the proximity of the interface.