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Vacancies and B doping in Si nanocrystals

✍ Scribed by Jae-Hyeon Eom; Tzu-Liang Chan; James R. Chelikowsky

Book ID
104093669
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
979 KB
Volume
150
Category
Article
ISSN
0038-1098

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✦ Synopsis

We examine the effect of vacancies on the doping of Si nanocrystals with B atoms. The electronic structure problem is solved in real space using pseudopotentials constructed within density functional theory. In the absence of vacancies, we find that it is energetically favorable for B dopants to be placed at or near the nanocrystal surface. However, in the presence of a vacancy, the B dopant can be stabilized within the nanocrystal as the vacancy effectively relieves the dopant induced stress.

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## Abstract The introduction of vacancy type point defects by Si doping in InN grown by plasma‐assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In‐vacancy (__V__~In~) acceptor