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In SituStress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates

✍ Scribed by Jarod C. Gagnon, Mihir Tungare, Xiaojun Weng, Jeffrey M. Leathersich, Fatemeh Shahedipour-Sandvik, Joan M. Redwing

Book ID: 113087225
Publisher: Springer US
Year: 2011
Tongue: English
Weight: 595 KB
Volume: 41
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-011-1852-1

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