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In situB-doped Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition: Physical and electrical characterization

✍ Scribed by J. Irby; D. Kinosky; T. Hsu; R. Qian; A. Mahajan; S. Thomas; B. Anthony; S. Banerjee; A. Tasch; C. Magee

No coin nor oath required. For personal study only.

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