✦ LIBER ✦
Physical and electrical characterization of in situ boron-doped single-crystal silicon films grown at 450°C using remote plasma-enhanced chemical vapor deposition
✍ Scribed by B. Anthony; T. Hsu; R. Qian; J. Irby; D. Kinosky; S. Banerjee; A. Tasch; C. Magee
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 400 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0040-6090
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