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In situ P-doped Si and Si1−xGexepitaxial films grown by remote plasma enhanced chemical vapor deposition

✍ Scribed by S. Thomas; J. Fretwell; D. Kinosky; R. Qian; A. Mahajan; P. Munguía; S. Banerjee; A. Tasgh; C. Magee

No coin nor oath required. For personal study only.

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