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In situ X-ray diffraction investigation of porous silicon strains induced by the freezing of a confined organic fluid

✍ Scribed by C. Faivre; D. Bellet; G. Dolino


Book ID
118791060
Publisher
Springer
Year
2000
Tongue
English
Weight
181 KB
Volume
16
Category
Article
ISSN
1434-6036

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## Abstract High Resolution X‐ray Diffraction allows for the measurement of periodic strain fields in monocrystalline silicon and is non‐destructive. In this study a periodic strain field is induced in Si by SiO~2~ filled trenches (Shallow Trench Isolation process). The strain in Si is evaluated fo