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In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

✍ Scribed by Takahasi, M.; Nakata, Y.; Suzuki, H.; Ikeda, K.; Kozu, M.; Hu, W.; Ohshita, Y.

Book ID: 122653377
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 698 KB
Volume: 378
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.119

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## Abstract In situ X‐ray examination at a synchrotron beamline of the solution growth of self‐assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assemb