In situ processing of semiconductors

✍ Scribed by L.R. Harriott

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 955 KB
• Volume: 14
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90317-3

✦ Synopsis

The processing of semiconductor devices within a high vacuum or controlled ambient environment has received much attention over the past few years. The motivations for in situ processing include avoidance of contamination or oxidation in the atmosphere, improved device yields, and process simplification. The realization of in situ processing ranges from cluster tool processing for silicon very large scale integrated (VLSI) devices to all ultrahigh vacuum processing compatible with molecular beam epitaxy for III-V optoelectronic devices. This paper will review in situ processing methods with particular emphasis on combinations of fine-scale patterning and crystal growth in the III-V materials.