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In situ observation of nitridation of GaAs (001) surfaces by infrared reflectance spectroscopy

โœ Scribed by Kunihiko Uwai; Yoshiharu Yamauchi; Naoki Kobayashi

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
551 KB
Volume
100-101
Category
Article
ISSN
0169-4332

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In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
โœ Pristovsek, M. ;Tsukamoto, S. ;Koguchi, N. ;Han, B. ;Haberland, K. ;Zettler, J.- ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 139 KB ๐Ÿ‘ 1 views

We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole