✦ LIBER ✦

In situ measurement of stress generation arising from dislocation inclination in Al[sub x]Ga[sub 1âx]N:Si thin films

✍ Scribed by Acord, Jeremy D.; Manning, Ian C.; Weng, Xiaojun; Snyder, David W.; Redwing, Joan M.

Book ID: 120887814
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 411 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2986448

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Tensile stress generation and dislocatio

Tensile stress generation and dislocation reduction in Si-doped Al[sub x]Ga[sub 1âx]N films

✍ Manning, I. C.; Weng, X.; Acord, J. D.; Fanton, M. A.; Snyder, D. W.; Redwing, J 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 813 KB

Anisotropy of tensile stresses and crack

Anisotropy of tensile stresses and cracking in nonbasal plane Al[sub x]Ga[sub 1âx]N/GaN heterostructures

✍ Young, Erin C.; Romanov, Alexey E.; Gallinat, Chad S.; Hirai, Asako; Beltz, Glen 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 439 KB

Investigation of E[sub 1](LO) phonon-pla

Investigation of E[sub 1](LO) phonon-plasmon coupled modes and critical points in In[sub 1âx]Ga[sub x]N thin films by optical reflectance measurements

✍ Thakur, J. S.; Dixit, A.; Danylyuk, Y. V.; Sudakar, C.; Naik, V. M.; Schaff, W. 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 624 KB

Nitrogen-induced decrease of the electro

Nitrogen-induced decrease of the electron effective mass in GaAs[sub 1âx]N[sub x] thin films measured by thermomagnetic transport phenomena

✍ Young, D. L.; Geisz, J. F.; Coutts, T. J. 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 239 KB

Kinetic, crystallographic, and optical s

Kinetic, crystallographic, and optical studies of GaN and Al[sub x]Ga[sub 1âx]N thin films grown on Si(111) by pulsed reactive crossed-beam laser ablation using liquid alloys and N[sub 2] or NH[sub 3]

✍ Willmott, P. R.; Antoni, F.; DoÌbeli, M. 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 397 KB

Electron transport across bulk (Al/sub x

Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

✍ Morrison, A.P.; Lambkin, J.D.; van der Poel, C.J.; Valster, A. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 166 KB

In situ measurement of stress generation arising from dislocation inclination in Al[sub x]Ga[sub 1âx]N:Si thin films

In situ measurement of stress generation arising from dislocation inclination in Al[sub x]Ga[sub 1âx]N:Si thin films