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In situ cleaning effect on the electrical properties of Ge MOS devices by Ar gas anneal

✍ Scribed by Weiping Bai; Nan Lu; Ritenour, A.P.; Lee, M.L.; Antoniadis, D.A.; Dim-Lee Kwong

Book ID: 114618457
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 372 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.882402

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