✦ LIBER ✦

Impurity-Enhanced Intergranular Cavity Formation in Silicon Nitride at High Temperatures

✍ Scribed by Isao Tanaka; Giuseppe Pezzotti; Ken-ichi Matsushita; Yoshinari Miyamoto; Taira Okamoto

Book ID: 110825364
Publisher: John Wiley and Sons
Year: 1991
Tongue: English
Weight: 1024 KB
Volume: 74
Category: Article
ISSN: 0002-7820
DOI: 10.1111/j.1151-2916.1991.tb06920.x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Viscous energy dissipation at high tempe

Viscous energy dissipation at high temperatures in silicon nitride

✍ G Roebben; L Donzel; S Stemmer; M Steen; R Schaller; O Van der Biest 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 599 KB

He-induced cavity formation in silicon u

He-induced cavity formation in silicon upon high-temperature implantation

✍ P.F.P Fichtner; A Peeva; M Behar; G.de M. Azevedo; R.L Maltez; R Koegler; W Skor 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 244 KB

Giant negative magnetoresistance in diel

Giant negative magnetoresistance in dielectric silicon nitride films in high electric fields at low temperatures

✍ N.A. Asadullayev; I. Ciric 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 293 KB

Polycrystalline silicon film formation a

Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

✍ B Mebarki; S Sumiya; R Yoshida; M Ito; M Hori; T Goto; S Samukawa; T Tsukada 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 95 KB

Enhanced solubility and ion pairing of C

Enhanced solubility and ion pairing of Cu and Au in heavily doped silicon at high temperatures

✍ R.L. Meek; T.E. Seidel 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 966 KB

On the kinetics of the formation of inte

On the kinetics of the formation of interstitial Fe–vacancy pairs in silicon at high temperatures

✍ H.P. Gunnlaugsson; G. Weyer; N.E. Christensen; M. Dietrich; M. Fanciulli; K. Bha 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Radioactive 57 Mn þ ions ðT 1=2 ¼ 1:5 minÞ of 60 keV energy have been implanted to low fluences into silicon crystals held at temperatures of 470-820 K: Most of the implantation damage is annealed during the 57 Mn lifetime and the 57 Mn atoms are incorporated on substitutional sites. Interstitial Fe