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Impurity density of states of the oxygen thermal donor in silicon. Formalism and application

✍ Scribed by Banerjee, K.; Singh, Vijay A.

Book ID
123329322
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
304 KB
Volume
4
Category
Article
ISSN
0167-577X

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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450Β°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno