๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Impurity and Topological Surface States in Porous Silicon

โœ Scribed by Ninno, D. ;Buonocore, F. ;Cantele, G. ;Iadonisi, G.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
87 KB
Volume
182
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Ion irradiation of porous silicon: The r
โœ L.G. Jacobsohn; B.L. Bennett; D.W. Cooke; R.E. Muenchausen; M. Nastasi ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 127 KB

Porous Si was obtained by electrochemical etching of p-doped Si(1 0 0) and progressively irradiated with H + , He + or Ne 2+ ions. Photoluminescence (PL) spectra were obtained as a function of the displacement-per-atom parameter up to $0.01 level, which nearly extinguished emission. The PL quenching