Ion irradiation of porous silicon: The r
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L.G. Jacobsohn; B.L. Bennett; D.W. Cooke; R.E. Muenchausen; M. Nastasi
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Article
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2006
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Elsevier Science
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English
โ 127 KB
Porous Si was obtained by electrochemical etching of p-doped Si(1 0 0) and progressively irradiated with H + , He + or Ne 2+ ions. Photoluminescence (PL) spectra were obtained as a function of the displacement-per-atom parameter up to $0.01 level, which nearly extinguished emission. The PL quenching