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Improvements of drain current characteristics of InAs field-effect transistors by the surface reaction of platinum gate

โœ Scribed by Kanji Yoh; Hayato Takeuchi; Hideki Hasegawa; Satoshi Izumiya; Masataka Inoue


Book ID
103390448
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
323 KB
Volume
38
Category
Article
ISSN
0038-1101

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