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Improvement of silicon etching resolution using the confined etchant layer technique

✍ Scribed by Yanbing Zu; Lei Xie; Zhaowu Tian; Zhaoxiong Xie; Jiqian Mu; Bingwei Mao


Book ID
105641071
Publisher
Springer
Year
1997
Tongue
English
Weight
146 KB
Volume
42
Category
Article
ISSN
1001-6538

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## Abstract Different homo epitaxial 4H‐SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural