✦ LIBER ✦

A Comparative Study on Electrochemical Micromachining of n-GaAs and p-Si by Using Confined Etchant Layer Technique

✍ Scribed by Zhang, Li; Ma, Xin Z.; Lin, Mi X.; Lin, Yu; Cao, Guo H.; Tang, Jing; Tian, Zhao W.

Book ID: 126941322
Publisher: American Chemical Society
Year: 2006
Tongue: English
Weight: 464 KB
Volume: 110
Category: Article
ISSN: 0022-3654
DOI: 10.1021/jp063110m

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Microstructure of N-face InN grown on Si

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

✍ Dimitrakopulos, G. P. ;Kehagias, Th. ;Ajagunna, A. ;Kioseoglou, J. ;Kerasiotis, 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 650 KB

## Abstract The structural properties of 2 µm thick N‐face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th

Moisture measurement in thin soil layers

Moisture measurement in thin soil layers by absorption of gamma rays in a capillary porous body : KUHN, W TECH. HOCHSCHULE HANOVER, D SCHATZLER, HP TECH. HOCHSCHULE HANOVER, D Proc. Panel on use of nuclear techniques in soil physics and irrigation studies, Vienna, 1970. 5F. SOIL MOISTURE AND IRRIGATION STUDIES II, IAEA, VIENNA, APR. 1973, P67–76

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 219 KB