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Improvement of shallow base transistor technology by using a doped poly-silicon diffusion source : Takagi, Nakayama, Terada and Kamioka, Proceedings 4th Conference on Solid State Devices, Tokyo, 30–31 August (1972). Japan Soc. Appl. Phys. 42 (1973) Suppl. p. 101

Publisher: Elsevier Science
Year: 1973
Tongue: English
Weight: 114 KB
Volume: 12
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(73)90091-7

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