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Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge–Sb–Te alloys

✍ Scribed by Sung-Min Yoon; Seung-Yun Lee; Soon-Won Jung; Young-Sam Park; Byoung-Gon Yu


Book ID
108271723
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
803 KB
Volume
53
Category
Article
ISSN
0038-1101

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