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Comparative study of memory-switching phenomena in phase change GeTe and Ge2Sb2Te5 nanowire devices

✍ Scribed by Se-Ho Lee; Yeonwoong Jung; Hee-Suk Chung; Andrew T. Jennings; Ritesh Agarwal


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
493 KB
Volume
40
Category
Article
ISSN
1386-9477

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