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Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation

✍ Scribed by S.A. Vitusevich; A.M. Kurakin; R.V. Konakova; A.E. Belyaev; N. Klein

Book ID: 103819555
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 385 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.07.029

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con