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High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures

โœ Scribed by Y. Q. Tao; D. J. Chen; Y. C. Kong; B. Shen; Z. L. Xie; P. Han; R. Zhang; Y. D. Zheng


Book ID
107453638
Publisher
Springer US
Year
2006
Tongue
English
Weight
92 KB
Volume
35
Category
Article
ISSN
0361-5235

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## Abstract Nanosecondโ€pulsed currentโ€“voltage measurements were used to study hotโ€electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN twoโ€dimensional electron gas channels biased up to 200 kV/cm. Voltage pulses of 1 ns were applied in order to minimize channel heating. The current saturated a