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Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures

✍ Scribed by Qiao, D.; Yu, L. S.; Jia, L.; Asbeck, P. M.; Lau, S. S.; Haynes, T. E.

Book ID: 120268870
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 431 KB
Volume: 80
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1447591

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