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Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

✍ Scribed by Seong-Jin Kim


Book ID
119802146
Publisher
IEEE
Year
2005
Tongue
English
Weight
200 KB
Volume
17
Category
Article
ISSN
1041-1135

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## Abstract Wafer‐scale UV nanoimprint and dry etching processes were used to fabricate photonic crystal patterns on an indium tin oxide (ITO) top electrode of GaN‐based green light‐emitting diodes (LEDs). Photonic crystal patterns with pitches ranging from 600 to 900 nm were transferred to the ent