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Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping

✍ Scribed by Zhidan Zeng; Lin Wang; Xiangyang Ma; Shaoxing Qu; Jiahe Chen; Yonggang Liu; Deren Yang

Book ID: 113898892
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 197 KB
Volume: 64
Category: Article
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2011.01.014

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## Abstract The formation of an oxygen precipitate denuded zone in nitrogen‐doped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit