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Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

โœ Scribed by B. Kaczer; J. Franco; J. Mitard; Ph. J. Roussel; A. Veloso; G. Groeseneken


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
391 KB
Volume
86
Category
Article
ISSN
0167-9317

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Improved electrical characteristics and
โœ Chung-Hao Fu; Kuei-Shu Chang-Liao; Wei-Hao Tseng; Chun-Chang Lu; Tien-Ko Wang; W ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 770 KB

MOSFET devices with Ge channel and nitridation treatment using plasma immersion ion implantation (PIII) are studied in this work. Experimental results show that the electrical characteristics and reliability of Ge MOSFETs can be significantly improved by PIII nitridation. For instance, the mobility