Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO

✍ Scribed by C.X. Li; P.T. Lai; J.P. Xu

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 322 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.049