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Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

✍ Scribed by Wang, Liancheng; Zhang, Yiyun; Li, Xiao; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong

Book ID
120464762
Publisher
The Royal Society of Chemistry
Year
2013
Tongue
English
Weight
954 KB
Volume
3
Category
Article
ISSN
2046-2069

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## Abstract We investigated the electroluminescence (EL) properties of europium (Eu)‐doped GaN‐based red light‐emitting diode (LED). Under current injection, the energy transfer from the GaN host material to Eu^3+^ ions successfully occurred and the red emission from Eu^3+^ ions was observed with n