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Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg Implanted Current Blocking Layer

✍ Scribed by Min-An Tsai; Peichen Yu; Chen, J.R.; Huang, J.K.; Chiu, C.H.; Kuo, H.C.; Lu, T.C.; Lin, S.H.; Wang, S.C.

No coin nor oath required. For personal study only.

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